AO4600 symbol max p-channe l unit s v ds v v gs v i dm t j , t stg c symbol typ ma x 48 62.5 74 110 r jl 35 40 -30 12 gate-source voltage a continuous drain current a t a =25c i d t a =70c pulsed drain current b w 6.9 5.8 40 2 1.44 -4.2 -5 2 1.44 absolute maximum ratings t a =25c unless otherwise noted parameter max n-channel 30 -30 12 drain-source voltage t a =70c power dissipation t a =25c p d steady-state c/w junction and storage temperature range thermal characteristics: n-channel and p-channel -55 to 150 -55 to 150 maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a features n-channel p-channel v ds (v) = 30v -30v i d = 6.9a (v gs = 10v) -5a (v gs = - 10v) r ds(on) < 27m ? < 49m ? (v gs = - 10v) < 32m ? < 64m ? (v gs = - 4.5v) < 50m ? < 120m ? (v gs = - 2.5v) the AO4600 uses advanced trench technology to provide excellent r ds(on) and low gate charge. the complementary mosfets form a high-speed power inverter, suitable for a multitude of applications. standard product AO4600 is pb-free (meets rohs & sony 259 specifications). AO4600l is a green product ordering option. AO4600 and AO4600l are electrically identical. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 soic-8 g2 d2 s2 g1 d1 s1 n-channe l p-channel complementary enhancement mode field effect transistor general description www.freescale.net.cn 1 / 10
AO4600 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.7 1 1.4 v i d(on) 25 a 22.6 27 t j =125c 33 40 27 32 m ? 42 50 m ? g fs 12 16 s v sd 0.71 1 v i s 3a c iss 858 1050 pf c oss 110 pf c rss 80 pf r g 1.4 2 ? q g 9.6 12 nc q gs 1.65 nc q gd 3nc t d(on) 5.7 ns t r 13 ns t d(off) 37 ns t f 4.2 ns t rr body diode reverse recovery time 15.5 20 ns q rr body diode reverse recovery charge 7.9 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =15v, i d =6.9a gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =2.2 ? , r gen =6 ? reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =5a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance r ds(on) static drain-source on-resistance v gs =10v, i d =6.9a m ? v gs =4.5v, i d =6.0a v gs =2.5v, i d =5a gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =12v i f =5a, di/dt=100a/ s i f =5a, di/dt=100a/ s n-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 10
AO4600 typical n-channel electrical and thermal characteristic s 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =2v 2.5v 3v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs (volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 0 5 10 15 20 i d (amps) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.00 0.25 0.50 0.75 1.00 1.25 1.50 v sd (volts) figure 6: body diode characteristics i s amps 125c 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 0 50 100 150 200 temperature ( c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 10 20 30 40 50 60 70 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =5a 125c 25c 25c i d =5a www.freescale.net.cn 3 / 10
AO4600 typical n-channel electrical and thermal characteristic s 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power w 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1m s 0 .1 s 1s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =6.9a single pulse d=t on / t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c f=1mhz v gs =0v www.freescale.net.cn 4 / 10
AO4600 symbol min typ max units bv dss -30 v -1 t j =55c -5 i gss 100 na v gs(th) -0.7 -1 -1.4 v i d(on) -25 a 42.5 49 t j =125c 74 54 64 m ? 80 120 m ? g fs 711 s v sd -0.75 -1 v i s -3 a c iss 952 1200 pf c oss 103 pf c rss 77 pf r g 5.9 30 ? q g 9.5 12 nc q gs 2nc q gd 3.1 nc t d(on) 12 ns t r 4ns t d(off) 37 ns t f 12 ns t rr 21 26 ns q rr 13 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice . p-channel mosfet electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =-250 a, v gs =0v i dss zero gate voltage drain current v ds =-24v, v gs =0v a gate-body leakage current v ds =0v, v gs =12v gate threshold voltage v ds =v gs i d =-250 a on state drain current v gs =-4.5v, v ds =-5v r ds(on) static drain-source on-resistance v gs =-10v, i d =-5a m ? v gs =-4.5v, i d =-4a v gs =-2.5v, i d =-1a forward transconductance v ds =-5v, i d =-5a diode forward voltage i s =-1a,v gs =0v maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =-15v, f=1mhz output capacitance reverse transfer capacitance gate resistance v gs =0v, v ds =0v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-15v, i d =-5a gate source charge gate drain charge turn-on delaytime v gs =-10v, v ds =-15v, r l =3 ? , r gen =6 ? turn-on rise time turn-off delaytime turn-off fall time body diode reverse recovery time i f =-5a, di/dt=100a/ s body diode reverse recovery charge i f =-5a, di/dt=100a/ s a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. rev 4 : sept 2005 www.freescale.net.cn 5 / 10
AO4600 typical p-channel electrical and thermal characteristic s 0 5 10 15 20 25 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2v -2.5v -3v -4.5v -10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics -i d (a) 20 40 60 80 100 120 0246810 -i d (a) figure 3: on-resistance vs. drain current and gat e voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-2.5v v gs =-10v v gs =-4.5v 10 30 50 70 90 110 130 150 170 190 0246810 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =-5v v gs =-2.5v v gs =-4.5v v gs =-10 v i d =-2a 25c 125c i d =-2a i d =-5a www.freescale.net.cn 6 / 10
AO4600 typical p-channel electrical and thermal characteristic s 0 1 2 3 4 5 024681012 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0 .1 s 1 s 10s dc r ds(on) limite d t j(max) =150c t a =25c v ds =-15v i d =-5a single pulse d=t on / t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s www.freescale.net.cn 7 / 10
so-8 package marking description AO4600 marking description version document no. title rev c pd-00165 note: logo - aos logo 4600 - part number code. f&a - foundry and assembly location y - year code w - week code. l t - assembly lot code code AO4600 4600 part no. description AO4600l standard product green product 4600 standard product green product www.freescale.net.cn 8 / 10
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so-8 tape and reel data so-8 carrier tape so-8 reel so-8 tape leader / trailer & orientation www.freescale.net.cn 10 / 10
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